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Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation -band structure warping and generalized valley-orbit interaction.Specifically, we implement valley qubits / FETs in bilayer graphene, as prospective quantum devices to build valley-based quantum / classical information processing.

We explore the potential application of graphene-based qubits in photonic quantum communications. In particular, the valley pair qubit in double quantum dots of gapped graphene is investigated as a quantum memory in the implementation of quantum repeaters. For the application envisioned here, our work extends the recent study of the qubit (Wu et al., arXiv: 1104.0443; Phys. Rev. B 84, 195463 (2011)) to the case where the qubit is placed in a normal magnetic field-free configuration. It develops, for the configuration, a method of qubit manipulation, based on a unique AC electric field-induced, valley-orbit interaction-derived mechanism in gapped graphene. It also studies the optical response of graphene quantum dots in the configuration, in terms of valley excitation with respect to photonic polarization, and illustrates faithful photon \leftrightarrow valley quantum state transfers. This work suggests the interesting prospect of an all-graphene approach for the solid state components of a quantum network, e.g., quantum computers and quantum memories in communications.Comment: 4 figure

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Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: (i) all electrical gate control, (ii) electrically switchable valley polarity, (iii) robustness against configuration fluctuation, and (iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics.