Resistive memory is one of the most promising candidates for next-generation nonvolatile memory technology due to its variety of advantages, such as simple structure and low-power consumption. Bipolar resistive switching behavior was observed in epitaxial ZnO nanoislands with base diameters and heights ranging around 30 and 40 nm, respectively. All four different states (initial, electroformed, ON, and OFF) of the nanoscale resistive memories were measured by conductive atomic force microscopy immediately after the voltage sweeping was performed. Auger electron spectroscopy and other experiments were also carried out to investigate the switching mechanism. The formation and rupture of conducting filaments induced by oxygen vacancy migration are responsible for the resistive switching behaviors of ZnO resistive memories at the nanoscale.

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