In recent years, the thermoelectric properties of one-dimensional boron nitride nanomaterials have gradually attracted widespread attention of researchers in the world. In this paper, boron carbon nitrogen based composite nanofiber films were prepared by electrospinning. It is found that the diameter of nanofibers decreases in BCNNTs/PVA/PEDOT composite films when electrospinning voltage rises, while diameter increases as PVA and BCNNTs concentration increase of electrospinning precursor solution. Finally, thermoelectric power factor is investigated of the composite nanofiber films. It is verified that thermoelectric properties of the films closely related to electrospinning quality. However, fiber density of single-layer BCNNTs/PVA/ PEDOT nanofiber film is too low, folding increase the density and thickness of multilayer BCNNTs/PVA/PEDOT nanocomposite fiber films, and the thermoelectric characteristics are significantly improved. The Seebeck coefficient can reach 3.62 mV/K and the power factor is 29.09 nW/mK 2 .

Two-dimensional hexagonal boron nitride (2D h-BN), a representative of 2D layered materials with unique structure and properties, is one of the most promising inorganic nanomaterials in recent years. The excellent properties of h-BN in the mid-infrared (MIR) region (∼2–20 μm) have also received much attention. At the same time, with the advancement of materials exploration and device-on-chip integrated systems, the synthesis of high-quality h-BN has encountered great challenges, which is a prerequisite for the application of h-BN in the MIR region. In this paper, we first review the recent advances in 2D h-BN synthesis by highlighting the research, advantages and disadvantages of various synthesis methods, and the critical issues encountered so far. Then, advances in the study and application of h-BN in the MIR region are explored, including perfect absorption, photodetectors, electro-optical modulators, phonon polaritons, and plasma excitons. Finally, we present our views on the challenges encountered in the synthesis and application of 2D h-BN in the MIR region in the near future in the context of the article’s discussion and the potential of h-BN development, with the hope this review will be of some help to relevant researchers.

The fabrication process of vacuum ultraviolet (VUV) detectors based on traditional semiconductor materials is complex and costly. The new generation of wide-bandgap semiconductor materials greatly reduce the fabrication cost of the entire VUV detector. We use the chemical vapor deposition (CVD) method to grow boron nitride nanoribbons (BNNRs) for VUV detectors. Morphological and compositional characterization of the BNNRs was tested. VUV detector based on BNNRs exhibits strong response to VUV light with wavelengths as short as 185 nm. The photo–dark current ratio (PDCR) of this detector is 272.43, the responsivity is 0.47 nA/W, and the rise time and fall time are 0.3 s and 0.6 s. The response speed is faster than the same type of BN-based VUV detectors. This paper offers more opportunities for high-performance and low-cost VUV detectors made of wide-bandgap semiconductor materials in the future.