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The purpose of this study was to characterize the partial strain recovery of a thermoset shapememory polymer under a constraining stress. Three polymer networks were synthesized from tert-butyl acrylate and poly(ethylene glycol) dimethacrylate (PEGDMA) solutions. The molecular weight and the weight fraction of the PEGDMA crosslinking monomer was altered systematically to maintain a constant glass transition temperature (T g ¼ 54 C) but tailorable rubbery moduli, which varied by almost an order of magnitude for the three polymer networks (E 0 r ¼ 1.8-11.3 MPa). The shape-recovery behavior of the polymers under a constraining stress was characterized for programming temperature below (20 C) and above (70 C) the T g . The experiments revealed a peak in the recovered strain for samples programmed at 20 C. Recovered strain scaled linearly with the constraining stress by the rubbery modulus. The work performed by the shape-memory polymer networks was observed to be primarily a function of constraining stress and crosslinking density, while programming temperature had a relatively mild influence; however, the efficiency of the shape-memory effect was shown to be a function of constraining stress and programming temperature, but was independent of crosslinking density. Maximum work efficiencies (up to 45%) were observed for programming temperature of 70 C. V C 2012 Wiley Periodicals, Inc. J Appl Polym Sci 126: 72-82, 2012

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Shape‐memory polymers (SMPs) have emerged as a multi‐functional materials platform and have been proposed for a variety of applications ranging from simple actuators to biomedical devices. The shape‐memory cycle is demonstrated through a three‐step process of programming, storage, and recovery. In this paper, recent findings that associate each step of the shape‐memory cycle to unique recovery behavior are highlighted. The article focuses on the influence of deformation temperature, long‐term storage (physical aging), partially constrained recovery, and mechanically driven recovery with respect to shape‐memory behavior.