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A radio frequency inductively coupled plasma (rf-ICP) nitrogen discharge was investigated to improve group III nitride growth on Si substrates. Two modes of the rf-ICP discharge, low brightness (LB) and high brightness (HB) discharges, were successfully controlled through mode transition. Direct irradiation and indirect irradiation of nitrogen atoms were applied for the growth of group III nitrides. As an application of indirect irradiation of nitrogen atoms, the growth of-Si 3 N 4 using interface reaction epitaxy (IRE) was studied. As applications of direct irradiation of nitrogen atoms, activity modulation migration-enhanced epitaxy (AM-MEE) and plasma-assisted molecular beam epitaxy (PA-MBE), which are atomic layer epitaxy (ALE) methods, are demonstrated. These growth systems operate to realize a single-growth process from a Si substrate to an AlN or GaN epitaxial layer, i.e., through preparation of a double buffer (DBL) layer of AlN/-Si 3 N 4 /Si after the growth of IRE-Si 3 N 4 and IRE AlN. The electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode is demonstrated to measure in situ direct and indirect nitrogen atom fluxes during the growth.

A fabrication process of an interface reaction epitaxy (IRE) β‐Si3N4 and an IRE AlN were investigated to produce a double buffer layer (DBL) of AlN(0001)/β‐Si3N4/Si(111) for the growth of group III nitrides films on Si. The β‐Si3N4 was formed by using adsorbed (ADS) nitrogen atoms irradiated indirectly from a rf‐plasma cell. Two surface structures of the β‐Si3N4, which were “8 x 8” and “8/3 x 8/3” reconstructions, were fabricated by changing the nitrogen irradiation conditions; complete and incomplete nitridation of Si surface and successive heat treatment up to 875 °C formed the “8 x 8” and “8/3 x 8/3” structures, respectively. IRE AlN was grown by 1 monolayer of Al deposition on the β‐Si3N4 and successive annealing at 875 °C. Al and N polarity DBLs were grown on the “8 x 8” and “8/3 x 8/3” structures, respectively. These results indicated that the polarity of DBL could be controlled by the surface reconstruction of β‐Si3N4 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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