We report the current-induced light emission (CILE) at RT from a porous silicon (PS) Schottky device exhibiting good rectifying characteristics with the ideal factor of 14. The photoluminescence spectrum from the PS layer fabricated by laterally anodization peaks at 688nm. The intensity of CILE increases with increasing current. It has run for more than two hours and still keeps stable. Possible mechanism of CILE is discussed.

Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated at various carrier concentrations. The PA signal intensity at energies lower than the energy gap increased with increasing carrier concentration for both types. The increase is considered to be due to the increase in the heat generated in the samples following free carrier absorption and nonradiative relaxation processes. The PA signal intensity increased drastically above a carrier concentration of 1017 cm-3 for n-type and above that of 1016 cm-3 for p-type silicon.

Author have previously reported that the distribution of a specular reflected light, i.e., goniophotometric curve, on fabrics can be simulated by assuming the warp yarn to be a simple elliptic column. Experimental results agreed well with these calculated curves. It is desirable, however, to use a model more closer to the real fabrics, since the surface of fabrics is very complicated.Simulated goniophotometric curves were obtained in a computer simulation using a new thread model, in which a parallel light flux was assumed to be projected to the fabrics. The new thread model consists of many fine elliptic cylinders arranged side by side covering the entire surface of a large elliptic column. In this computer simulation, the axis of incident light flux and photodetector was assumed to lie on a plane perpendicular to the warp ends of fabrics. This new simulation method can find wider use than that of the previous paper.

A previous paper '' described the simulation of specular reflected light curves by use of a fabric model. The simulation treated the case of a parallel light flux projected perpendicular to the filament axis in the fabric, and the model consisted of fine elliptic columns arranged side by side on the surface of an elliptic cylinder.In the present paper, the authors present a computer simulation of specular rerected light curves in which a parallel light flux is applied parallel to the filament axis of the fabric, using a new filament model. The new model consists of a number of thin elliptic cylinders of various minor axis lengths. Distribution of the minor axis length obeys two different rules: elliptic distribution, and normal distribution.As with the method described in a previous paper,1'' the present study aims to simulate the specular reflection curves of fabrics.

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