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In response to recent industrial demands for refining hot metals without using halides at the lowest CaO consumption, the possibility of hot metal dephosphorization by CaO-SiO.

The removal of boron from metallurgical-grade silicon was investigated by applying an ArlH.O plasma treatment to develop a new production technique for low cost solar-grade silicon (SOG-Si).The EquipmentsAs shown in Fig. l Table 2, the operating parameters are H20 concentration of the plasma gas, kind of oxidant, initial concentration of boron in silicon, and flux addition.Analysis of boron was performed by inductively coupled plasma emission spectroscopy (ICP-ES).