We discovered for the first time that light can twist metal to control the chirality of metal nanostructures (hereafter, chiral metal nanoneedles). The helicity of optical vortices is transferred to the constituent elements of the irradiated material (mostly melted material), resulting in the formation of chiral metal nanoneedles. The chirality of these nanoneedles could be controlled by just changing the sign of the helicity of the optical vortex. The tip curvature of these chiral nanoneedles was measured to be <40 nm, which is less than 1/25th of the laser wavelength (1064 nm). Such chiral metal nanoneedles will enable us to selectively distinguish the chirality and optical activity of molecules and chemical composites on a nanoscale and they will provide chiral selectivity for nanoscale imaging systems (e.g., atomic force microscopes), chemical reactions on plasmonic nanostructures, and planar metamaterials.

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

Using an approach that allows us to probe the electronic structure of strongly pinched-off quantum point contacts (QPCs), we provide evidence for the formation of self-consistently realized bound states (BSs) in these structures. Our approach exploits the resonant interaction between closely-coupled QPCs, and demonstrates that the BSs may give rise to a robust confinement of single spins, which show clear Zeeman splitting in a magnetic field.

Microneedle fabrication on a metal surface based on laser ablation using twisted light with spin was demonstrated, for the first time.The resulting needle showed a height of at least 10 µm above the target surface and a tip diameter of less than 0.3 µm. We also demonstrated the fabrication of a two-dimensional 5 × 6 microneedle array. The needles were uniformly well shaped with an average length and tip diameter of about 10 and 0.5 µm, respectively. ©2010 Optical Society of America

We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.