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In semiconductor production lines, film-thickness is typically measured utilizing ellipsometry or the microspectroscopic measurement. The microspectroscopic measurement is fast, higbly accurate and easy to carry out. When the film thickness is less than tens of rim, this method, however, can not provide adequate measurements. We changed the wavelength used for measurement from the visible light range to the ultra-violet (UV) range and were able to achieve ultrathin-flim measurement. At the same time, we found other useful applications of this research: Si02-fi]m measurement on the polisilicon layer, evaluation of the degree of crystallization of Si film, and others. For highly accurate measurements of ultrathin film, it is vital that the focus and angle be precisely adjusted. In this paper, we report a IJV film-thickness measurement system with an automatic adjustment mechanism for the focus and sample surface angle, and also present examples of estimates using this system.