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This work investigates the effect of heating techniques on the realization of the ITS-90 fixed points above room temperature. For that purpose, LNE has constructed a new apparatus to realize the indium fixed point under adiabatic conditions using the "calorimetric" method. The adiabatic condition, in general, is established by maintaining a temperature difference between the fixed-point cell and its surroundings that is as small as possible. In this work, the indium fixed-point cell is located within thermally controlled heat shields whose walls also contain indium. Thus, the shields themselves are also indium cells. The experiments realizing the melting and freezing temperatures of indium using the calorimetric method are described. The results revealed the existence of thermal effects in the realization of the indium fixed-point cell by the conventional "continuous heat flux" method. The advantages of the "cell-withincell" technique are presented.

A new metrological facility devoted to the thermal conductivity measurements up to 1000 °C for thin films (from few tens nanometers to few micrometers thick) deposited on substrate has been recently designed at LNE. Its measurement principle is based on the infrared modulated photothermal radiometry technique (MPTR). This device has been applied to the thermal characterization of industrially relevant chalcogenide thin films (Ge2Sb2Ti5) up to 400 °C. This work, performed in the frame of the European joint research project “Thin Films,” seeks to improve the traceability to the International System of Units (SI) as well as the reliability of this type of measurements at sub‐micrometer scale.

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