We have proposed a Heterojunction free Ga2O3 FinFET, and the different electrical characteristics have been analysed. Fin width is one of the most important parameters for device performance; as such, all of the electrical characteristics have been analysed for different finwidths. Temperature is one of the most important considerations for high power applications and electrical characteristics have been analysed by varying temperature. Here, an exhaustive study on the RF and linearity analysis on Heterojunction-free Ga2O3 layer FINFET using a TCAD device simulator is demonstrated. The impact when varying the widths of fin along with the temperature variation for the device on various RF parameters like drain current, gm (transconductance), gd (output conductance), Cgs and Cgd (gate capacitances), and fT (cut-off frequency) were studied. The same work has been performed to calculate different linearity parameters such as gm2, gm3, VIP3, IIP3, IMD3, 1db compression point. It is observed that to have high value for finwidth and to have lower temperature value is desirable for RFIC applications. In order to exhibit the superiority of the Ga2O3 FINFET it has been compared with the SOI FINFET.