A numerical code has been developed to calculate the loading of a cavity loop antenna in threedimensional geometry. The loading of the cavity is calculated for fast wave and ion Bernstein wave coupling and compared with the loading of a conventional loop antenna. For fast waves, the cavity loading increases with increasing edge density, while the conventional loop loading is less sensitive to the edge density but shows a slight decrease of loading because of a steeper density gradient. For ion Bernstein waves, the two types of antenna behave similarly; however, in contrast to the loading for fast waves, the loading for ion Bernstein waves increases with decreased edge density and a steeper density gradient.

The authors designed a photo-polymer objective lens which can be used for both red and blue lasers. The following two conditions were set to facilitate this lens production process. 1) We chose photo-polymer resin as one of the doublet lens materials. 2) One surface of the photo-polymer lens was designed to be flat. We installed this lens in pickup heads and played back some disks. Its performance was almost as good as that of a noncompatible glass lens.

Adaptive optics systems have been studied extensively in recent years. In this field a phase shift modulator is used and it was found to be useful for the image enhancement, beam shaping, image processing, etc.1) 2)

No abstract

We report on the theoretical investigation of how geometrically uniform highly doped silicon nanowires can break up into a series of islands that exhibit Coulomb blockade. By using a newly developed numerical simulation in which random ionized dopants are introduced explicitly and the electron distribution is calculated self-consistently under the Thomas-Fermi approximation, we demonstrate natural formation of electron islands in the nanowires owing to the random dopant potential. We study the quasi-one-dimensional nature of the electron islands formed in the nanowires. The offset charge effects on the current threshold of the nanowire transistors are then investigated by feeding the derived structural parameters such as inter-island capacitance and tunnel resistance into a Monte Carlo single electron transport simulator. We show that the overall threshold voltage distribution can roughly be described as a two-'macro'-island system despite a complex series of multiple electron islands.