No abstract

Device charging in the ion implantation is evaluated by using two different types of electrically erasable-programmable read-only memory (EEPROM) devices and two different types of metal-oxide-semiconductor (MOS) capacitors. The averaged charging voltage is measured by the turn-on voltage shift (ΔV T) of a grounded source EEPROM, while the transient charging effect is detected by a floating source EEPROM. The yield of the MOS capacitor reaches its maximum when the grounded source EEPROM shows the minimum ΔV T. The effects of the charge-collecting electrode area and substrate type of the MOS capacitor are also examined.

No abstract

A compact Plasma Flood System @fs) has been developed for Applied Materials Precision Implant 9000/9200. Operating in the accevdecel mode with 12 mA, 40 keV As+ and 10 mA of B E + at 30 keV, the pfs demonstrated 100% yield with lo6 antenna MOS capacitors over 6.5 and 10 nm gate oxides. With 0 V guide tube bias, emission current is about 240 mA at 4 A arc The pfs is easily serviceable, with demonstrated filament life in excess of four weeks.