A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n‐(In‐Ga‐Zn‐O) and p‐type (SnOx) active oxide semiconductors and uses a transparent conductive oxide (In‐Zn‐O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.

Abstract-In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors (FETs). In this new approach, we are using the cellulosefiber-based paper in an "interstrate" structure since the device is built on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (> 30 cm 2 /Vs), drain-source current on/off modulation ratio of approximately 10 4 , near-zero threshold voltage, enhancement n-type operation, and subthreshold gate voltage swing of 0.8 V/decade. The cellulose-fiber-based paper FETs' characteristics have been measured in air ambient conditions and present good stability, after two months of being processed. The obtained results outpace those of amorphous Si thin-film transistors (TFTs) and rival with the same oxide-based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and lowcost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID, and point-of-care systems for self-analysis in bioapplications, among others.Index Terms-Cellulose fibers, oxide field-effect transistor (FET), RF magnetron sputtering, thin films.

The ability to process and dimensionally scale field‐effect transistors with and on paper and to integrate them as a core component for low‐power‐consumption analog and digital circuits is demonstrated. Low‐temperature‐processed p‐ and n‐channel integrated oxide thin‐film transistors in the complementary metal oxide semiconductor (CMOS) inverter architecture are seamlessly layered on mechanically flexible, low‐cost, recyclable paper substrates. The possibility of building these circuits using low‐temperature processes opens the door to new applications ranging from smart labels and sensors on clothing and packaging to electronic displays printed on paper pages for use in newspapers, magazines, books, signs, and advertising billboards. Because the CMOS circuits reported constitute fundamental building blocks for analog and digital electronics, this development creates the potential to have flexible form factor computers seamlessly layered onto paper. The holistic approach of merging low‐power circuitry with a recyclable substrate is an important step towards greener electronics.