ZnO nanowires doped with Aluminium (AZO) grown by chemical bath deposition technique on ITO/glass substrates exhibit random lasing emission with lowest threshold of just 0.07 W/cm2 when 12.5 % of aluminium nitride was added during the growth of the nanorods. Compared to pure ZnO nanorods, grown with the same parameters, threshold was at least 2 orders of magnitude lower. Results overall indicate incorporating aluminium reduces threshold for random lasers however improvements in doping high aluminium content without affecting growth is required to reduce the threshold at high doping levels.