Table 1 Instrumental conditions and method parameters for the VGA single-chamber autoclave with a heating plate was used for PlasmaQuad 2 the acid dissolution of quartz and metallic silicon. Analysis was performed by ICP-MS. Comparison of 6Li, 7Li, 115In, 35Cl and Rf power 1350 W 37Cl+36Ar1H was carried out for selecting the best internal Plasma gas flow 13 l min−1 standard taking into account instrumental drift. The selection Auxiliary gas flow 0.8 l min−1 Nebulizer gas flow 0.834 l min−1 criteria are discussed. 35Cl was selected as the internal standard. Solution pump rate 1 ml min−1 Sample introduction system Nebulizer, spray chamber Silicon is the most important material for the conversion of Sample uptake time 60 s solar energy into electrical energy. Boron and phosphorus Equilibration time 90 s define the conductivity of semiconductor materials. The analyt-Analysis time 60 s ical control of the concentrations of these elements is needed Number of replicates 3 Detector mode Dual mode (PC and/or analog) in the initial, intermediate and final samples in the production Sampler/skimmer cones Nickel of silicon photovoltaic materials. Scan mode Scan The determination of B and P has some difficulties connected Number of channels 20 with sample preparation and the low concentration of these Dwell time 320 ms per channel impurities (<0.001% m/m) in quartz and metallic silicon.1-4 Mass range 3.5-130 ICP-MS is one of the best analytical methods for the accurate Total acquisition 4.5 min

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