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Diffusion of nitrogen implanted in tungsten and molybdenum single crystals has been investigated at temperature about 0.3 Tm (Tm is the melting point). Existence of several dopant atom fluxes is found in subsurface region of the ion implanted material. The diffusion coefficients of the nitrogen connected with the radiation damages and that with the bulk diffusion mechanism are determined. Change of the nitrogen surface concentration has been measured by Auger electron spectroscopy. Initial distribution of the nitrogen and diffusion profiles for various annealing time have been determined by secondary-ion mass-spectroscopy technique. Transmission electron microscopy and X-ray diffraction investigations were used to study the microstructure and phase state of the implanted samples.

Theoretical base for non-destructive diffusion parameters determination technique in solids taking into account the dopant flux from the sample surface is presented. Diffusion of the nitrogen implanted in the tungsten single crystals was determined in temperature range 700–820°C. Surface concentration of nitrogen was obtained by Auger electron spectroscopy. Initial distribution of the nitrogen in subsurface region was measured by secondary-ion mass-spectroscopy. Two dopant atom fluxes found in subsurface region of the ion-implanted material are supposed to connect with the radiation damages and with the bulk diffusion mechanism.