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The distribution of temperature profiles in nonstoichiometric SiO𝑥 films at the single pulse laser annealing has been studied theoretically. Temperature distributions on the surface of the SiO𝑥 films at irradiation by a laser beam with various intensities have been calculated. Temperature distributions on various depths of the SiO𝑥 films at irradiation by a laser beam with an intensity of 52 МW/cm 2 have been found. During the laser pulse of 10 ns with an intensity of 52 MW/cm 2 , the temperature up to 1800 K can be reached on the specimen surface. K e y w o r d s: SiO𝑥 films, thermal conductivity, nanocrystals.

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