No abstract

In this paper, the dependence of negative bias temperature instability (NBTI) and low-frequency noise characteristics on the various nitrided gate oxides is reported. The threshold voltage shift (ÁV T ) under NBTI stress for thermally nitrided oxide (TNO) was greater than that of plasma nitrided oxide (PNO), whereas the slopes of ÁV T versus stress time for PNO were similar to those for TNO. The flicker noise (1=f noise) characteristic of PNO was better than that of TNO by about 1 order of magnitude, although the 1=f noise of PNO showed almost the same dependence on the frequency as that of TNO. The carrier number fluctuation model due to the trapping and detrapping of electrons in oxide traps was found to be a dominant mechanism of flicker noise. The probability of the generation of drain current random telegraph signal (I D -RTS) noise shows similar values (70-78%) for all nitrided oxides, which shows that the generation of RTS noise is not greatly affected by the nitridation method or nitrogen concentration. #

The discovery of the role of nitric oxide (NO) as an endothelial relaxant [1] and cell mediator with various functions [2] in the past decade has stimulated the search for compounds capable of supplying NO. The therapeutic effect of most vasodilators such as nitroglycerin, sodium nitroprusside, and nitrosothiols has been attributed to the decomposition of these compounds in vivo with the release of NO [3]. N-Oxide derivatives of furazane [4, 5], pyrazole [6] and 3,4-dihydro-l,2-diazete [7, 8] are nitrogen heterocycles, whose biological activity may be related to the release of NO.

No abstract