The intensity of photoluminescence in ZnSe:Cu:Cl is measured in dependence of added Cu concentration. It is shown that the intensity of activated emission is a power function of the copper concentration in a large region (1017 to 1018 cm−3). The comparison of an experimental curve with the theoretical one permits to determine the structure of radiative and nonradiative recombination centres and predominant defects of Cu and Cl in ZnSe:Cu:Cl.
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