I-V, C-V characteristics and current change kinetics of the Ni-TiOx-p/Si-Ni heterojunction were studied under different speeds of voltage sweep, in darkness and under illumination of various spectral regions. It was found that Ni-TiOx-p/Si-Ni heterojunction shows pronounced hysteretic behavior and can act as memristor cell. Results of studies of photosensitivity and current kinetics under abrupt changes of applied voltage and illumination reveal considerable role of surface states recharging in TiOx oxide layer or at TiOx-p/Si interface in the switching effects.The studied Ni-TiOx-p/Si-Ni heterostructure is prospective as a basis for low-cost, CMOS- and SOI-compatible microelectronic devices with non-volatile memory.

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