Iridium thin films are deposited on sub-micrometer three-dimensional trench structures by plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD). The iridium precursor used in this study is (ethylcyclopentadienyl)(1,5cyclooctadiene)iridium [Ir (EtCp)(1,5-COD)]. Various process conditions at substrate temperatures from 300°C to 450°C, with and without plasma enhancement, are investigated and compared. Crystal structure of the deposited iridium films is analyzed by X-ray diffraction (XRD).Step coverage of the deposited iridium films on three-dimensional trench structures is analyzed by scanning electron microscopy (SEM). Surface morphology is quantitatively evaluated by atomic force microscopy (AFM) and the electrical resistivity of the deposited Ir films is measured by the four-point probe method.

Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800˚C consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization (2•Pr) and coercive field (Ec) are 16.2 μC/cm 2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (2•Pr = 6.4 μC/cm 2 , Ec = 154 kV/cm). In the films prepared above 700˚C, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.

Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800˚C consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization (2•Pr) and coercive field (Ec) are 16.2 μC/cm 2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (2•Pr = 6.4 μC/cm 2 , Ec = 154 kV/cm). In the films prepared above 700˚C, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.