In the last decade, ionic liquids have shown great promise in a plethora of applications. However, little attention has been paid to the characterisation of the purity of these fluids, which has ultimately led to non-reproducible data in the literature. In order to facilitate specification of ionic liquids, a number of analytical protocols with their limits of detection (where available) have been compiled, including methods of other authors. In particular, quantitative methods have been developed and summarised for the determination of the total ionic liquid content, residual unreacted ionic liquid starting material and by-products (amines, alkylating agents, inorganic halides), solvents from extraction procedures and water, in addition to decomposition products and total volatiles.

Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size (< 50 nm), as well as the preservation of their physical properties upon device integration.In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior resulting in linear IV curves for low bias voltages at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs electronic properties upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.

The on‐surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. Herein, Raman spectroscopy is used to characterize different types of GNRs on their growth substrate and track their quality upon substrate transfer. A Raman‐optimized (RO) device substrate and an optimized mapping approach are presented that allow for the acquisition of high‐resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO2/Si substrates. This approach is well suited to routinely monitor the geometry‐dependent low‐frequency modes of GNRs. In particular, the radial breathing‐like mode (RBLM) and the shear‐like mode (SLM) for 5‐, 7‐, and 9‐atom‐wide armchair GNRs (AGNRs) are tracked and their frequencies are compared with first‐principles calculations.