No abstract

No abstract

No abstract

We measured the complex dielectric constant in mats of single-wall carbon-nanotubes between 2.7 K and 300 K up to 0.5 THz. The data are well understood in a Drude approach with a negligible temperature dependence of the plasma frequency ωp and scattering time τ with an additional contribution of localized charges. The dielectric properties resemble those of the best "metallic" polypyrroles and polyanilines. The absence of metallic islands makes the mats a relevant piece in the puzzle of the interpretation of τ and ωp in these polymers. PACSnumbers: 71.20.Hk,71.20.Tx,72.80.Le,77.84.Jd

Abstract:GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.