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Semiconductor–metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. Using the finite element method, we study the EMR effect in rectangular semiconductor–metal hybrid structures and investigate the effects of material parameters and of device geometry. We find that the EMR device exhibits inverse scalability, i.e., the output characteristics improve with decreasing device width. This is promising for miniaturized magnetic-field sensors like, e.g., read heads. Using realistic device parameters, we predict an optimized performance as a sensor for a width-to-length ratio of 0.025.

We have fabricated hybrid structures consisting of a metallic thin film and of a microstructured two-dimensional electron system in an InAs heterostructure. The devices are found to exhibit a huge magnetoresistance (MR) effect in magnetic fields ⩽1 T. At low temperature, a value of ΔR/R=[R(B=1 T)−R(B=0)]/R(B=0) as high as 115 000% is measured. The value of ΔR/R has been studied as a function of the electron mobility, the electron density and the lateral width of the semiconductor. We find that the MR effect can be tailored by these different parameters and technological relevant devices can be realized.

Experimental and theoretical studies have shown that nonmagnetic semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. The EMR can be useful in magnetic-field sensors and read heads. We show that the sensitivity of a linear hybrid structure can be further enlarged by using an optimized configuration of current leads and voltage probes. Strikingly, we find that the EMR and the Hall effect cooperate and thereby improve the performance. Our findings also explain the origin of the recently reported sensitivity increase in a nanostructured EMR device obtained via interchanging one lead and one probe [J. Moussa et al., J. Appl. Phys. 94, 1110 (2003)].

Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with experimental data. In particular, we investigate the important effect of the contact resistance ρc between the semiconductor and the metal on the EMR effect. Introducing a realistic ρc = 3.5 × 10 −7 Ωcm 2 in our model we find that at room temperature this reduces the EMR by 30% if compared to an analysis where ρc is not considered.