The concept of the elegant work introduced by Lévai in Ref. [5] is extended for the solutions of the Schrödinger equation with more realistic other potentials used in different disciplines of physics. The connection between the present model and the other alternative algebraic technique in the literature is discussed.

This marble extracted from deposits in Elazığ in Turkey resembles red meat in appearance and is only found in Elazığ. This type of marble has been widely used in the most famous architectural structures and buildings. In this study, the thermoluminescence (TL) properties of a unique marble that originated from Turkey, named Rosso Levanto, were investigated. Two distinct TL peaks were observed at 160°C and around 375°C. Particle size experiments showed that best TL intensity was seen at 200 μm particle size and therefore dose–response, heating rate, cycle of measurement and fading experiments were carried out on powdered samples with a particle size of 200 μm. The findings revealed good linearity in dose–response, observed up to 0.5 kGy. The reproducibility experiment gave good results, but peak intensity decreased by about 40% in first 6 h of storage in a dark room.

The GaP-based dilute nitride direct band gap material Ga(NAsP) is gaining importance due to the monolithic integration of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga(NAsP)/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaN x As y P 1−x−y /GaP QWs on GaP substrates. We examine the effect of nitrogen (N) concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaN x As y P 1−x−y /GaP QWs with that of the GaN x As y P 1−x−y /Al z Ga 1−z P QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and Al into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.

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We propose an algebraic model, presenting individual contributions separately in the system of interest, for the exact solutions of one-dimensional Poisson-Schrödinger equations used generally in semiconductor device simulations. The model presented here reveals an interesting relation between the corresponding Poisson and Schrödinger equation for the physical structure considered, which leads to closed solutions without solving the required electrostatic equation.