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In this paper, an ITO-based hybrid plasmonic ring resonator modulator has been designed and proposed. Improving the extinction ratio (ER) and the quality factor is considered in designing the modulator. The proposed structure in this paper seeks to reduce the capacitance by reducing the surface between silicon and ITO/HfO 2 interface in the ring. Two structures have been proposed based on the ring resonator. In the first structure, high-quality factor, low insertion loss (IL), and low power consumption are obtained, equal to 777, 0.28 dB, and 103fJ. In the second proposed structure, the ER is 12.22 dB, and the quality factor is 514. The finite-difference time-domain (FDTD) method has been used to investigate the modulator characteristic.

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In this paper, a hybrid plasmonic modulator based on ITO and graphene is designed. Graphene and ITO are used in the active region, which increases the light-matter interaction and reduces the device's operating voltage in the proposed modulator. As a result, it increases the extinction ratio (ER) and reduces the proposed modulator's power consumption and device footprint compared to similar modulators. The values of 8.12 dB/µm and 5.4 fJ are obtained for ER and power consumption, respectively. The time-domain finite-difference (FDTD) method is used to simulate the modulator. Integrating a modulator with high light-matter interaction and low power consumption in the silicon-on-insulator platform has significant potential for broadband, compact and efficient communication interconnects and circuits.