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Im Hinblick auf die Sulfidbildung an Fe‐Co‐Legierungen bei hohen Temp. und auf die Extraktion von Co aus Sul?derzen wurde im System Fe‐Co‐Sein isothermer Schnitt im gesamten Konzentrationsbereich bei 1073 K ermittelt.

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Interfacial reactions between iridium and gallium arsenide in both the thin-film and bulk forms have been investigated in the temperature range 400 to 1000·C using transmission electron microscopy, energy dispersive x-ray analysis, and electron probe microanalysis. The diffusion path for Ir/GaAs has been determined to be Ir/lrGa/lrAs2/GaAs and is consistent with the phase diagram between the initial stages of reaction (thin-film) and long-term annealing (bulk). In the thin film case where the Ir supply is limited, the final configuration is 11'3 Ga s / IrAs2/GaAs. The diffusion path and reaction morphology has been rationalized using the phase diagram, kinetic observations, and growth mechanisms observed during the reactions.6798

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