Internet of Things connects the physical and cybernetic world. As such, security issues of IoT devices are especially damaging and need to be addressed. In this treatise, we overview current security issues of IoT with the perspective of future threats. We identify three main trends that need to be specifically addressed: security issues of the integration of IoT with cloud and blockchains, the rapid changes in cryptography due to quantum computing, and finally the rise of artificial intelligence and evolution methods in the scope of security of IoT. We give an overview of the identified threats and propose solutions for securing the IoT in the future.

It is known that a naive implementation of the decryption algorithm in the McEliece cryptosystem allows an attacker to recover the secret matrix P by measuring the power consumption. We demonstrate that a similar threat is present in the QC-LDPC variant of the McEliece cryptosystem. We consider a naive implementation of the decryption algorithm in the QC-LDPC McEliece cryptosystem. We demonstrate that this implementation leaks information about positions of ones in the secret matrix Q. We argue that this leakage allows an attacker to completely recover the matrix Q. In addition, we note that the quasi-cyclic nature of the matrix Q allows to accelerate the attack significantly.

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The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in the band gap of the semiconductor. The present paper generalizes the model to the case of two mutually coupled defect levels acting as trapping centres. If the intercenter transition is not considered, the model reduces to the case of two non-coupled levels treated by the SRH model. THEORYThe paper considers the existence of lattice defects (electrically active traps) having two coupled defect levels (CDL) in the band gap of the semiconductor between which thermal exchange of free charge carriers takes place. The two coupled capture centres are denoted by indices a and b with corresponding energies E Our CDL model considers ten exchange processes of free charge carriers between the capture centres and the conduction and valence bands. These processes are schematically shown in Fig. 1.Each of the ten exchange processes (five capture and five emission processes) is characterized by its escape time. If the unknown occupation probability of a trapping centre is divided by the escape time of a capture process, or the probability of non-occupation by the escape time of an emission process, one obtains the frequency of the particular exchange process. The frequencies of exchange processes allow to build two equations with two unknown variables, the occupation probabilities of centres a and b. Their solution leads to a quadratic equation yielding finally the occupation probabilities. Then, in terms of the ten escape times and of the evaluated occupation probabilities of centres a and b one can correctly define the SRH and CDL recombination rates contained in the continuity equations [3]. The quasi-static continuity equations for electrons and holes can be written as 1 q dJ e

The paper describes a new approach to calculate currents in a PN diode based on the extension of the Shockley-Read-Hall recombination-generation model. Presented model is an alternative to Hurkx model of trap assisted tunnelling.