In this article, a novel high-k VDMOS with vertical stepped doping profile is presented. It possesses lower area specific on-resistance (R on A) in comparing to the conventional structure while the blocking capacity remains unaltered. Hence, the trade-off between the breakdown voltage and R on A is optimized as well as area specific on-resistance is reduced from 68% to 27%. The proposed structure shows analogous behavior as conventional structure with improved current driving capability from 42% to 24%. Thus, it exhibits improved device characteristics and possesses enhanced figure of merits than conventional structure.

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