Semipolar III‐nitrides have attracted increasing attention because of the reduced piezoelectric field in the active layer. In particular, (11‐22) plane is promising due to the small polarization field along the growth axis and the epitaxial matching on m‐plane sapphire. The aim of this study was to assess the effect of growth conditions on the structural and electrical properties of Si‐doped (11‐22) AlGaN. Semipolar AlGaN/AlN layers were grown on m‐plane sapphire by metal‐organic chemical vapor deposition at different temperatures, V/III ratios, and tetraethylesilane flows. Surface morphology, crystalline quality, and electrical properties of the AlGaN layers were investigated with AFM, XRD, and by Hall measurements, respectively.