In this study, the effects of temperature and frequency on minority carrier diffusion coefficient in silicon solar cell under a magnetic field are presented. Using two methods (analytic and graphical), the optimum temperature corresponding to maximum diffusion coefficient is determined versus cyclotronic frequency and magnetic field.

Geometric parameters are an important data for the choice of solar cell architecture, for better conversion performance. As poor optoelectronic material is used, i.e. short minority carrier's diffusion length and under concentrated light which increases the temperature, it is then important to optimize the width of the lamella in order to have better photogenerated charge collection. Thus the intent of this work is the determination of the width of the lamella structure, presented through phenomelogical parametersmodeling study. These are the diffusion length and coefficient, as well as the surfacerecombination velocity of the photogenerated carriers in the base of the lamella silicon. The result gives a mathematical relationship between the optimum width and the operating temperature of the lamella solar cell, allowing to influence the industrial manufacturing process for the material economy.

Excess minority carrier's diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of polychromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n+/p) and back surface (p+/p), the expression of the excess minority carriers' density  is determined. The density of photocurrent Jph (T, ) is represented according to the recombination velocity at the junction for different temperature values. The expression of the ac back surface recombination velocity Sb of minority carriers is then deduced depending on frequency of modulation, temperature, electronic parameters (D) and the thickness of the base. Bode and Nyquist diagrams are used to analyze, both diffusion coefficient and back surface recombination of excess minority carriers submitted to Umklap process.

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The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.