It is shown theoretically that in a layered heterostructure comprising piezoelectric, dielectric antiferromagnetic crystal, and heavy metal (PZ/AFM/HM), it is possible to control the anisotropy of the AFM layer by applying a dc voltage across the PZ layer. In particular, we show that by varying the dc voltage across the heterostructure and/or the dc current in the HM, it is possible to vary the frequency of the antiferromagnetic resonance of the AFM in a passive (subcritical) regime and, also, to reduce the threshold of the current-induced terahertz-frequency generation. Our analysis also shows that, unfortunately, the voltageinduced reduction of the generation threshold leads to the proportional reduction of the amplitude of the terahertz-frequency signal generated in the active (supercritical) regime. The general results are illustrated by a calculation of the characteristics of experimentally realizable PZT-5H/NiO/Pt.

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