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The effect of fluorine preamorphization on boron diffusion and activation during rapid thermal annealing (RTA) has been investigated. Compared with low energy B or BF2 implant into crystalline Si, F preamorphization suppressed the transient enhanced diffusion of B and increased dopant activation. Results show that the tail diffusion was absent, and thus the junction depth of the RTA annealed sample was established by the as-implanted B profile. Secondary ion mass spectroscopy and cross-sectional transmission electron micrograph results show F accumulation near the surface and at end-of-range defects. The interaction of F with defects is believed to reduce the B diffusion during RTA.

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