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The dimethylzinc-bidentate ether adducts [Me 2 Zn(1,4-dioxane)] (1), [Me 2 Zn(1,2-dimethoxyethane)] (2) and [Me 2 Zn(1,4-thioxane)] (3) are used as precursors for the growth of vertically aligned zinc oxide (ZnO) nanowires (NWs) by liquid-injection, metal-organic (MO)CVD. The ZnO NWs are deposited on Si(111) and F-doped SnO 2 /glass substrates in the absence of a seed catalyst. The precursors (1) and (2) are used to deposit ZnO NWs at substrate temperatures of 450 8C and 500 8C, whilst higher deposition temperatures of 550-600 8C are necessary to obtain ZnO NWs using (3). X-ray diffraction (XRD) data show that the NWs grown from all three adduct precursors are deposited in the wurtzitic ZnO phase. Room-temperature photoluminescence (PL) data for the ZnO NWs grown using (1) and (2) show an intense peak at 3.28 eV due to near band-edge emission with a very low intensity of defect-related green luminescence at 2.42 eV. In contrast, room-temperature PL data for the ZnO NWs deposited using (3) is dominated by deep centre, defect-related emission at 2.42 eV. Auger electron spectroscopy (AES) shows that the ZnO films deposited from (1) and (2) are high purity with no detectable carbon, but the ZnO films grown from (3) are contaminated with sulfur (1 at.-%). Single-crystal X-ray structures show that (1) is polymeric containing bridging 1,4-dioxane ligands while (2)