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In this paper, we described the Infrared technologies (MCT, QWIP and microbolometers) characterization carried out by CELAR, in addition to the Electro-Optical (EO) characterization driven by ONERA, both backing up service programs of the French National Armaments Organization (DGA). After a brief description of the methodology and tools used, some results are given in order to show the construction and failure analysis contributions in the correlation of EO defects to visual defects and also, in the quality and preventive reliability improvements for these IR technologies, for a better satisfaction of the military end-users needs.

A detailed correlation between the temperature dependence of the resistivity of polycrystalline selenium thin films and the presence of oxygen at the grain boundaries is established. The temperature dependence of the dc and ac resistivity and the thermoelectric power of polycrystalline selenium thin film structures are studied as functions of thermal history and ambient gas exposure (argon, air atmosphere, dry oxygen, helium). Annealing at 413 K for 4 h under oxygen results in a decrease of the room temperature resistivity and an increase of the resistivity with increasing temperature from 290 to 350 K. Evidence that these effects are due to oxygen diffusion at the grain boundaries is deduced from ac conductivity dependence of planar structures, thermoelectric dower measurements, and ESCA studies.

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