High resolution thin-membrane masks are duplicated in PMMA by contact printing with 250 ke V Ga + ions, Upon development, minimum feature widths on the order of 70 nm are obtained, Broadening of ion-exposed lines in PMMA as a function of development time is studied, A microscopic investigation of PMMA irradiated with 50 ke V H + ions and 250 ke V Ga + ions at doses near the development threshold reveals peculiar morphological modifications prior to, and following development. The modification of theoretical energy dissipation distributions with the inclusion of recoil atoms in heavy-ion irradiation of resists is investigated with the aid of a Monte Carlo simulation program (RECUL). Using the three-dimensional energy distributions thus obtained, developed-line profiles are simulated,

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