The harmonic oscillator is a foundational concept in both theoretical and experimental quantum mechanics. Here, we demonstrate harmonic oscillators in a semiconductor platform by faithfully implementing continuously graded alloy semiconductor quantum wells. Unlike current technology, this technique avoids interfaces that can hamper the system and allows for the production of multiwell stacks several micrometers thick. The experimentally measured system oscillations are at 3 THz for two structures containing 18 and 54 parabolic quantum wells. Absorption at room temperature is achieved: this is as expected from a parabolic potential and is unlike square quantum wells that require cryogenic operation. Linewidths below 11% of the central frequency are obtained up to 150 K, with a 5.6% linewidth obtained at 10 K. Furthermore, we show that the system correctly displays an absence of nonlinearity despite electronelectron interactions-analogous to the Kohn theorem. These high-quality structures already open up several new experimental vistas.

The ultrafast scattering dynamics of intersubband polaritons in dispersive cavities embedding GaAs=AlGaAs quantum wells are studied directly within their band structure using a noncollinear pump-probe geometry with phase-stable midinfrared pulses. Selective excitation of the lower polariton at a frequency of ∼25 THz and at a finite in-plane momentum k k leads to the emergence of a narrowband maximum in the probe reflectivity at k k ¼ 0. A quantum mechanical model identifies the underlying microscopic process as stimulated coherent polariton-polariton scattering. These results mark an important milestone toward quantum control and bosonic lasing in custom-tailored polaritonic systems in the mid and far infrared.