Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H-SiC Appl.Phosphorus and boron ion implantations were performed at various energies in the 50 keV-4 MeV range. Range statistics of P ϩ and B ϩ were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 1400-1700°C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant was found to be stable at any annealing temperature investigated, but the B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measurements. For the 250 keV/1.2ϫ10 15 cm Ϫ2 P implant, annealed at 1600°C for 15 min, the measured donor activation at room temperature is 34% with a sheet resistance of 4.8ϫ10 2 ⍀/ᮀ. The p-type conduction could not be measured for the B implants.