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Abstm-A h -b a n d monolithic HBT power amplifier was developed using a MOCVD-grown / GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5-V collector bias, the amplifier produced 0.5-W CW output power with 5.0-dB gain and 42% power-added eficiency in the 15-16-GHz band. When operated at a single frequency (15 GHd, 0.66-W CW output power and 5.2 dB of gain was achieved with 43% PAE.structure, size, and layout for effective high-frequency operation. A two-stage low-pass matching network was chosen for the amp1ifier for maximum bandwidth and efficient operation. The amplifier operated directly in a 5042 system. HBT DESIGN AND FABRICATION.