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Passivant-Hg 1-x Cd x Te interface has been studied for the CdTe and anodic oxide (AO) passivants. The former passivation process yields five times lower surface recombination velocity than the latter process. Temperature dependence of surface recombination velocity of the CdTe/n-HgCdTe and AO/nHgCdTe interface is analyzed. Activation energy of the surface traps for CdTe and AO-passivated wafers are estimated to be in the range of 7-10 meV. These levels are understood to be arising from Hg vacancies at the HgCdTe surface. Fixed charge density for CdTe/n-HgCdTe interface measured by CV technique is 5 ϫ 10 10 cm Ϫ2 , which is comparable to the epitaxially grown CdTe films. An order of magnitude improvement in responsivity and a factor of 4 increase in specific detectivity (D*) is achieved by CdTe passivation over AO passivation. This study has been conducted on photoconductive detectors to qualify the CdTe passivation process, with an ultimate aim to use it for the passivation of p-on-n and n-on-p HgCdTe photodiodes.

We report the first model of Zener tunnelling capacitance and its effect on the C-V characteristics of Hg, -,Cd,Te.For narrow band Hg, -,Cd,Te, with x = 0.2, even at moderate doping densities, C-V curves exhibit low-frequency behaviour at measurement frequencies as high as 1 MHz (both for p-type and n-type MCT). The model predicts the reported trends in C-V characteristics as a function of composition, doping density and measurement frequency.

Field emission of carbon nanotubes (CNTs) was remarkably improved by lanthanum-hexaboride (LaB6) nano-particles (NPs) decoration. CNTs were grown on the silicon substrate by chemical vapor deposition. Field emission of bare CNTs and LaB6-NPs decorated CNTs was carried out under same conditions. Physical, morphological, elemental, and graphitic nature changes were ascertained by scanning electron microscope, transmission electron microscope, energy dispersive x-ray spectroscopy, and Raman analysis. LaB6-NPs decorated CNTs show significant reduction of turn-on electric-field from 3.0 to 2.1 V/μm. A remarkable improvement of more than six-fold from 2.05 to 13.19 mA/cm2 at a field of 4.6 V/μm was also observed in the current-density.