We investigate a morphological instability that causes an InGaAs/InP multiquantum well structure grown on a vicinal (001) InP surface to spontaneously evolve into an array of InGaAs quasi-one-dimensional filaments buried in an InP matrix. To explain this behavior, we propose a step-flow growth model involving different lateral growth velocities for heteroepitaxy and homoepitaxy. A computer simulation based on the model agrees closely with the experiment.

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