Abseacs This report presents a GaAs pHEMT technology optimized for 26 V drain bias. At this bias, a 2.14 GHz gate width scaling study demonstrates output power densities of 1.8-2.1 Wlmm of output power at 1 dB gain compression Qlm) for device sum ranging from 14.4 mm down to 3.6 mm respectively. Power added efficiency (PAE) remains nearly constant at 59-61% for these device sues. Devices with 14.4 mm gate widths produced a PI^ of 26 W (1.8 W / m ) with an associated power-added efficiency (PAE) of 61%. Thermal imaging shows a thermal resistance of approximately 4.2 "CIW at a 36 OC case temperature for 14.4 mm (26 W) device. A high temperature step stress reliability study shows a median t h e to failure (MTTF) of 1.6 X IO' hours for a 150 'C channel temperature with a thermal activation energy of 1.8 eV. These results represent the hest combination of power density, PAE, and reliability reported for any GaAs-based FET technology.

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