Magnetization modulation by ferroelectric polarization switching is reported for the ferromagnetic-ferroelectric EuO/BaTiO3 heterostructure. The value of the magnetization critical exponent β is consistent with the expected Heisenberg-like ferromagnetism of EuO and reported Curie temperature. The critical exponent is seen to decrease with increased magnetic coupling. The results are discussed in the context of data obtained earlier for epitaxial La0.67Sr0.33MnO3/BaTiO3 heterostructures, where magnetization increases and critical exponent β also declines with ferroelectric polarization pointing away from ferromagnetic layer. The observed similarity between two systems illustrates an importance of charge doping in magnetoelectric coupling, which can be modulated by ferroelectric polarization reversal.

Young, C M.; McClory, J W.; Petrosky, J C.; Wang, X; Liu, P; Tang, Jinke; Adamiv, V T.; Burak, Ya V.; Fukutani, Keisuke; and Dowben, Peter A., "Gamma and X-ray sensitivity of Gd 2 O 3 heterojunctions" (2013 b s t r a c tWe find that Gd 2 O 3 thin films strongly favor a (À402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.