The deposition of copper by means of atomic layer epitaxy is reported. Using Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate as the precursor, pure and specular copper films were deposited at deposition temperatures below 200°C. This is more than 150°C lower than in previous reports for the same precursor where chemical vapor deposition has been employed. The process was self-limited in the temperature range 190 to 260°C. Area-selective deposition was achieved on platinum seeded substrates vs. unseeded glass slides or oxidized metal surfaces in the temperature range 175 to 300°C. At higher temperatures, the selectivity was lost, and nucleation was independent of substrate material because of a thermal decomposition of the precursor. [Oll] or [Oil] directions has been analyzed. Consequently, the conditions necessary t o achieve V-grooves having (111)A, (111)B, and (211)A sidewalls has been established. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2014-11-19 to IP lnfroduction ABSTRACT A systematic study has been performed on the production o f V-grooves i n (100) InP substrates b y wet chemical etching. The dissolution process and its dependence on etchant, etch mask, and its accuracy o f alignment relative t o the

Atomic layer epitaxy (ALE) of WO3 from WF6 and H2O has been studied. These precursors were found to yield very low deposition rates. This was attributed to a poor adsorption of WF6 on the oxide surface. Attempts to increase the adsorption of the metal source by in situ generation of tungsten subfluorides were unsuccessful due to severe etching problems. Our results, however, showed that different WOxFy compounds are good candidates for ALE of WO3 . The oxyfluorides were generated in situ by etching of tungsten oxide lumps with WF6 at temperatures up to 600°C. No analysis of the generated WOxFy precursors was carried out, but thermodynamic calculations suggest that the main etch products should be WOF4 and WO2F2 . An ALE process based on the in situ generated oxyfluorides and H2O as precursors was found to yield monoclinic WO3 films at substrate temperatures as low as 200°C. The deposition rate at this temperature was about 0.8 Å/deposition cycle. The films deposited at 200°C contained small amounts (<2 atom %) of fluorine. © 1999 The Electrochemical Society. All rights reserved.