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Significant improvements of a previously reported etching process [1] for Hg1−xCdxTe have been achieved with respect to etch rate, surface morphology and surface stoichiometry by optimization of the process parameters. The gas phase and surface reactions driving the etching process have been analyzed by combined optical and electrical characterization of the plasma and surface analyses of the samples. A reaction scheme is suggested which allows to model and upscale the process in a consistent manner.

U.S. Department of Energy [FG07-01AL67358, DE-FC07-06ID14781]In order to study the chemical interaction during interface formation between Pd and SiC, Pd layers of various thicknesses were deposited on structurally disordered SiC surfaces at 800 degrees C. The Pd/SiC interface, which plays a crucial role for many applications such as high power electronic devices and tristructural-isotropic (TRISO) nuclear fuels, was studied in situ by x-ray photoelectron spectroscopy. We find that after Pd deposition, Si-C and Si-Si bonds are broken in favor of the formation of not only Pd-Si but also Pd-C bonds. In addition, various silicon oxycarbide bonds are observed at the SiC surface and the Pd/SiC interface. These results are not only of relevance for the long-term stability of TRISO fuels but also for a variety of other applications, including Schottky-barrier-type contacts in electronic devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3500374

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