Germanium possesses higher electron and hole mobilities than silicon. There is a big leap, however, between these basic material parameters and implementation for high-performance microelectronics. Here we discuss some of the major issues for Ge metal oxide semiconductor field effect transistors ͑MOSFETs͒. Substrate options are overviewed. A dislocation reduction anneal Ͼ800°C decreases threading dislocation densities for Ge-on-Si wafers 10-fold to 10 7 cm −2 ; however, only a 2 times reduction in junction leakage is observed and no benefit is seen in on-state current. Ge wet etch rates are reported in a variety of acidic, basic, oxidizing, and organic solutions, and modifications of the RCA clean suitable for Ge are discussed. Thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at ϳ6 monolayers. Dopant species are overviewed. P and As halos are compared, with better short channel control observed for As. Area leakage currents are presented for pϩ/n diodes, with the n-doping level varied over the range relevant for pMOS. Germanide options are discussed, with NiGe showing the most promise. A defect mode for NiGe is reported, along with a fix involving two anneal steps. Finally, the benefit of an end-of-process H 2 anneal for device performance is shown.

The impact of light on the copper outplating from aqueous 0.5% HF solutions on 10-20 fl cm (100) silicon wafers is investigated. Illumination is found to drastically increase the copper deposition. A model based on the semiconductor properties of the silicon substrate which describes the copper plating onto silicon is proposed. It is found that the copper deposition onto these silicon surfaces is limited by the minority carrier supply at the wafer surface.

Brush scrubbers are among the most commonly used instruments for wafer-cleaning applications nowadays. However, the removal mechanisms of nanosized particles are far from clear, especially because no direct experimental data are available to backup theoretical models in the literature. This study combines a theoretical approach based on a force analysis with an experimental study of the removal of nanosized slurry particles. In the theoretical part, all forces affecting the adhesion and the removal of particles are evaluated to determine which are dominant in two extreme removal mechanisms: lifting and rolling. In the experimental part, the removal efficiency of 34nm SiO2 particles is investigated by using the haze approach. Based on a study of the aging of contaminated wafers, conditions are selected where no chemical bonds are formed between a particle and a substrate. Force analysis and experimental observations both show that nanosized particles cannot be lifted directly by a brush. Instead, rolling should be the main particle-removal mechanism. The average fluid film thickness between brush and wafer surface is determined based on power measurements of the brush motor and a friction analysis, indicating that the system is in a hydrodynamic lubrication regime across a wafer in average. In this frame, results also show that the hydrodynamic drag force is the dominant removal force for nanosized particles.

To ensure high device yields, wafer surface contamination and defects must be monitored and controlled during the entire process of semiconductor manufacturing. Particle surface concentrations on the wafers, mostly related to chemical mechanical polishing ͑CMP͒ processes, must be kept at the lowest possible levels. Brush scrubber cleaning has the potential to achieve this goal. However, the particle removal mechanisms are still under discussion especially the removal of nano-sized particles. This paper investigates the interactions between the particle, the brush and the wafer surface and explores the potential and limitations of the brush scrubbing technique. Furthermore the effect of the various brush/wafer parameters on the particle removal efficiency ͑PRE͒ is studied. From a mechanistic viewpoint it is shown that brush scrubbing acts in a mixed lubrication regime. From an extensive analysis of the relevant forces and moments it can be concluded that in the hydrodynamic lubrication regime, particles are removed by rolling under the dominant hydrodynamic drag force. In the boundary lubrication regime, particles can be removed by both rolling and lifting, mainly by the brush/particle van der Waals forces. The pH and the ionic strength of the cleaning fluid can influence the PRE. The chemical composition determines the electrostatic interactions of the particle once it is "kicked off " from the wafer surface: either the surface of the particles and the wafer carry the same charge and the particles remain in solution or the surface of the particles and the wafer has an opposite charge resulting in redeposition.

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