The dependence of the CL‐signal on the diffusion length L, the absorption coefficient α, the dead‐layer thickness zT, and the surface recombination velocity vs is studied in detail. The existence of a maximum in the CL‐signal in dependence on the beam voltage Ub is discussed. The position of this maximum in dependence on α and L is evaluated. The quantitative interpretation of experiments on n‐GaAs is explained by means of the theoretical model developed here.

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