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Fabrication, physical modeling and dynamic response of p-type Al-doped SnO x active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnO x active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high I ON /I OFF ratio of > 10 6 , low subthreshold swing of ∼100 mV/dec and high field-effect mobility (μ FE ) of 4.8 cm 2 V −1 s −1 . To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnO x and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p-type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnO x TFTs are potential candidates for future high-definition displays and many applications in transparent electronics. INDEX TERMS Thin film transistors (TFTs), Al doped SnO x , plasma fluorination, density of states (DOS), dynamic response.

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