Anodization at elevated temperatures in nitric acid has been used for the production of highly porous and thick tungsten trioxide nanostructured films for photosensitive device applications. The anodization process resulted in platelet crystals with thicknesses of 20-60 nm and lengths of 100-1000 nm. Maximum thicknesses of approximately 2.4 microm were obtained after 4 h of anodization at 20 V. X-ray diffraction analysis revealed that the as-prepared anodized samples contain predominantly hydrated tungstite phases depending on voltage, while films annealed at 400 degrees C for 4 h are predominantly orthorhombic WO3 phase. Photocurrent measurements revealed that the current density of the 2.4 microm nanostructured anodized film was 6 times larger than the nonanodized films. Dye-sensitized solar cells developed using these films produced 0.33 V and 0.65 mA/cm2 in open- and short-circuit conditions.
Among the available metal oxide nanostructures, tungsten oxide has remained, at times, troublesome to fabricate, with many synthetic methods often requiring exotic equipment and or reagents. In this work, we present a systematic investigation demonstrating a new method for the deposition of anhydrous and hydrated nanostructured tungsten oxide thin films via spin coating. The attributes of these materials include the following: high surface area, controllable deposition, and compatibility with existing semiconductor fabrication infrastructure making this method a suitable candidate for application in the manufacture of gas sensors and dye sensitized solar cells. We will show that it is possible to form micrometer thick highly crystalline nanostructured thin films and, using Raman, SEM, XRD, XPS, and TEM analysis, will prove that these nanostructures can be rendered into anhydrous or partially or fully hydrated tungsten oxides. We further demonstrate the application of these materials in the fabrication of an inexpensive NO2 gas sensor, capable of sensing sub-ppm levels of NO2 concentrations at a modest operating temperature of 175 °C.
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the interdot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.
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